photodiode 100 mm 2 UVG100 features ? square active area ? ideal for 193-400 nm detection ? 100% internal qe ? excellent uv response ? protective cover plate electro-optical characteristics at 25c parameters test conditions min typ max units active area responsivity, r shunt resistance, rsh reverse breakdown voltage, v r capacitance, c response time, tr thermal parameters storage and operating temperature range storage temperature range operating temperature range maximum junction temperature lead soldering temperature 1 -20 to 100c -20c to 80c 100c 240c 1 0.08" from case for 10 seconds dimensions are in inch [metric] units. 10 mm x 10 mm @ 254 nm @ 10 mv i r = 1 a v r = 0 v rl = 50 , v r = 10 v 0.08 20 100 0.09 10 10 0.13 20 10 mm 2 a/w mohms volts nf usec revision february 26, 2013 750 mitchell road, newbury park, california 91320 phone: (805) 499-0335, fax: (805) 499-8108 email: sales@optodiode.com, website: www.optodiode.com
photodiode 100 mm 2 UVG100 responsivity (a/w) 0.1 0.0 0.2 0.3 0.4 0.5 0.6 200 300 400 500 600 700 800 900 1000 1100 wavelength (nm) responsivity revision february 26, 2013 750 mitchell road, newbury park, california 91320 phone: (805) 499-0335, fax: (805) 499-8108 email: sales@optodiode.com, website: www.optodiode.com
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